MMO90-14IO6 1~ full-controlled ac controlling thyristor 2 1 3 4 part number MMO90-14IO6 backside: isolated tav t v v 1,2 rrm 50 1400 = v = v i = a features / advantages: applications: package: thyristor for line frequency planar passivated chip long-term stability line rectifying 50/60 hz softstart ac motor control dc motor control power converter ac power control lighting and temperature control sot-227b (minibloc) industry standard outline rohs compliant epoxy meets ul 94v-0 base plate: copper internally dcb isolated advanced power cycling isolation voltage: v~ 3000 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact the sales office, which is responsible for yo u. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact the sales office, whi ch is responsible for you. should you intend to use the product in aviation, i n health or live endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20150827b data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MMO90-14IO6 v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i v i a v t 1,27 r 0,6 k/w min. 50 v v 100 t = 25c vj t = c vj ma 10 v = v t = 25c vj i = a t v t = c c 95 p tot 210 w t = 25c c 50 1400 forward voltage drop total power dissipation conditions unit 1,53 t = 25c vj 125 v t0 v 0,88 t = c vj 150 r t 6 m ? v 1,20 t = c vj i = a t v 50 1,50 i = a 100 i = a 100 threshold voltage slope resistance for power loss calculation only a 150 v v 1400 t = 25c vj i a 110 p gm w t = 30 s 10 max. gate power dissipation p t = c c 150 w t = 5 p p gav w 0,5 average gate power dissipation c j 32 junction capacitance v = v400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 150 800 865 2,31 2,25 aa a a 680 735 3,20 3,12 1400 300 s rms forward current per phase rms tav 180 sine average forward current (di/dt) cr a/s 100 repetitive, i = t vj = 150 c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v = 6 v t = c25 (dv/dt) t = 150c critical rate of rise of voltage a/s 500 v/s t = s; i a; v = ? v r = ; method 1 (linear voltage rise) vj d vj 150 a t pg = 0,3 di /dt a/s; g = 0,3 drm cr v = ? v drm gk 1000 1,5 v t = c -40 vj i gt gate trigger current v = 6 v t = c25 d vj 100 ma t = c -40 vj 1,6 v 200 ma v gd gate non-trigger voltage t = c vj 0,2 v i gd gate non-trigger current 5 ma v = ? v d drm 150 latching current t = c vj 250 ma i l 25 t s p = 10 i a; g = 0,3 di /dt a/s g = 0,3 holding current t = c vj 100 ma i h 25 v = 6 v d r = gk gate controlled delay time t = c vj 2 s t gd 25 i a; g = 0,3 di /dt a/s g = 0,3 v = ? v d drm turn-off time t = c vj 150 s t q di/dt = a/s 10 dv/dt = v/s 15 v = r 100 v; i a; t = 50 v = ? v drm t s p = 200 non-repet., i = 50 a t 125 r thch 0,10 thermal resistance case to heatsink k/w thyristor 1500 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltag e max. repetitive reverse/forward blocking voltage r/d reverse current, drain current tt r/d r/d 200 ixys reserves the right to change limits, condition s and dimensions. 20150827b data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MMO90-14IO6 ratings abcd zyyww xxxxx product marking logo part no. datecode assembly code assembly line ? package t op c m d nm 1,5 mounting torque 1,1 t vj c 150 virtual junction temperature -40 weight g 30 symbol definition typ. max. min. conditions operation temperature unit m t nm 1,5 terminal torque 1,1 v v t = 1 second v t = 1 minute isolation voltage mm mm 10,5 3,2 8,6 6,8 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 150 a per terminal 125 -40 terminal to terminal sot-227b (minibloc) delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol MMO90-14IO6 485144 tube 10 MMO90-14IO6 standard 3000 isol t stg c 150 storage temperature -40 2500 threshold voltage v 0,88 m ? v 0 max r 0 max slope resistance * 4,2 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 150 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20150827b data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MMO90-14IO6 2 1 3 4 outlines sot-227b (minibloc) ixys reserves the right to change limits, condition s and dimensions. 20150827b data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MMO90-14IO6 0,01 0,1 1 300 400 500 600 7 0 0 0,4 0,8 1,2 1,6 2,0 0 20 40 60 80 100 1 20 10 0 10 1 10 2 10 3 10 4 0,0 0,2 0,4 0,6 0,8 i tsm [a] i t [a] v t [v] t [ms] z thjc [k/w] 2 3 4 5 6 7 8 9 01 1 500 1000 1500 2000 2500 3000 3 5 00 i 2 t [a 2 s] t [ms] i t(av)m [a] t c [c] 0 25 50 75 100 125 150 0 20 40 60 80 100 fig. 1 forward characteristics fig. 3 i 2 t versus time (1-10 ms) t [s] fig. 6 max. forward current at case temperature fig. 2 surge overload current fig. 8 transient thermal impedance junction to case t vj = 25c t vj = 125c t vj = 45c 50 hz, 80% v rrm t vj = 125c t vj = 45c v r = 0 v 125c 150c 0 20 40 60 0 20 40 60 80 i t(av) [a] p (av) [w] fig. 7a power dissipation versus direct output current fig. 7b and ambient temperature 0 50 100 150 t amb [c] dc = 1 0.5 0.4 0.33 0.17 0.08 fig. 4 gate trigger characteristics fig. 5 gate controlled delay time dc = 1 0.5 0.4 0.33 0.17 0.08 1 10 100 1000 10000 0,1 1 10 v g [v] 1: i gt , t vj = 125c 2: i gt , t vj = 25c 3: i gt , t vj = -40c 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w i gd , t vj = 125c 3 4 2 1 5 6 i g [ma] 10 100 1000 1 10 100 1000 i g [ma] t vj = 25c t gd [s] typ. limit r thha 0.4 0.6 0.8 1.0 2.0 4.0 r thi [k/w] t i [s] 0.039 0.0006 0.150 0.017 0.245 0.104 0.166 0.450 thyristor ixys reserves the right to change limits, condition s and dimensions. 20150827b data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
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